980 nm Packaged Laser Diode , ms pulse TO Package Single Emitter Diode Laser
LDMP-0980-005W-*4 series packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. With 20 years' experience in laser diode design and production, HTOE packaged single emitters provide excellent reliability and performance.
A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.
Advantages
- 980nm Center wavelength
- 5.6mm in TO Package design
- Provide beam shaping services like fast-axis compression according to customer demands
- 20 years' experience in packaged laser diode design and production
Parameters(20℃)
| TOØ56 Packaged Single Emitter |
| Item | Parameter | Unit | LDMP-0980-005W-*4 |
| Min. | Typical | Max. |
| Optical Parameter | Output power | W | - | 5 (ms pulse) | - |
| Lasing Wavelength | nm | 970 | 980 | 990 |
| Spectral Width | nm | - | 1.80 | 3.00 |
| Emitting Area width | µm | - | 150 | - |
| Temperature Coefficient | nm/℃ | - | 0.3 | - |
| Fast Axis Divergence | deg (cw-5w) | - | 25 | 30 |
| Slow Axis Divergence | deg (cw-5w) | - | 10 | 15 |
| Pulse Width | ms | 0 | 10 | - |
| Pulse Frequency | Hz | 0 | 10 | - |
| Electrical Parameter | Slope Efficiency | W/A | 0.90 | 1.00 | - |
| Threshold Current | A | - | 0.50 | 1.00 |
| Operating Current | A | - | 5.50 | 5.80 |
| Operating Voltage | V | - | 2.20 | 3.00 |
| Others | Package | - | TOØ56 |
| Operating Temperature | ℃ | 10 ~ 50 |
| Storage Temperature | ℃ | -10 ~ 60 |
Package Information
TOØ56 Package
Function Curve
P-I-V Curve
Notice
1. Item model notice: LDMP (Item model), 0980 (Center wavelength), 005W (Output power), *4 (Heat sink structure and item width).
2. Data in the sheet are all based on TOØ56 (socket, capless) package testing under 10ms 10Hz pulse condition.
3. Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.
4. Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.
5. The exceed power output will speed up the aging of the LD.
6. Laser diode belongs to electrostatic sensitive components. Should deal with anti-electrostatic method. To touch the LD directly unless human-body is well connect with ground. Otherwise the LD will be burned easily. To wear anti-electrostatic wrist band is necessary.
7. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.
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980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can Images
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